JPH06181297A - 集積回路メモリ - Google Patents
集積回路メモリInfo
- Publication number
- JPH06181297A JPH06181297A JP2280192A JP2280192A JPH06181297A JP H06181297 A JPH06181297 A JP H06181297A JP 2280192 A JP2280192 A JP 2280192A JP 2280192 A JP2280192 A JP 2280192A JP H06181297 A JPH06181297 A JP H06181297A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- programming
- memory
- signal
- column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims abstract description 93
- 230000004044 response Effects 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims description 33
- 230000006870 function Effects 0.000 abstract description 9
- 238000003491 array Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/651,817 US5197029A (en) | 1991-02-07 | 1991-02-07 | Common-line connection for integrated memory array |
US651817 | 1991-02-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06181297A true JPH06181297A (ja) | 1994-06-28 |
Family
ID=24614345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2280192A Pending JPH06181297A (ja) | 1991-02-07 | 1992-02-07 | 集積回路メモリ |
Country Status (5)
Country | Link |
---|---|
US (1) | US5197029A (en]) |
EP (1) | EP0498336A1 (en]) |
JP (1) | JPH06181297A (en]) |
KR (1) | KR100242683B1 (en]) |
TW (1) | TW227073B (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6781187B2 (en) | 2001-05-31 | 2004-08-24 | Seiko Epson Corporation | Nonvolatile semiconductor memory device |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2624864B2 (ja) * | 1990-02-28 | 1997-06-25 | 株式会社東芝 | 不揮発性半導体メモリ |
JP3002309B2 (ja) * | 1990-11-13 | 2000-01-24 | ウエハスケール インテグレーション, インコーポレイテッド | 高速epromアレイ |
US5719806A (en) * | 1991-02-18 | 1998-02-17 | Yamane; Masatoshi | Memory cell array |
JPH07147095A (ja) * | 1993-03-31 | 1995-06-06 | Sony Corp | 半導体不揮発性記憶装置およびデコーダ回路 |
US5440513A (en) * | 1993-05-03 | 1995-08-08 | Motorola Inc. | SRAM with programmable preset data |
US5777922A (en) * | 1996-10-18 | 1998-07-07 | Hyudai Electronics Industries Co., Ltd. | Flash memory device |
US6556503B2 (en) | 2001-08-21 | 2003-04-29 | Micron Technology, Inc. | Methods and apparatus for reducing decoder area |
WO2012068664A1 (en) * | 2010-11-23 | 2012-05-31 | Mosaid Technologies Incorporated | Method and apparatus for sharing internal power supplies in integrated circuit devices |
US9779796B1 (en) * | 2016-09-07 | 2017-10-03 | Micron Technology, Inc. | Redundancy array column decoder for memory |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57186289A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory |
JPS639097A (ja) * | 1986-06-30 | 1988-01-14 | Sony Corp | スタテイツクram |
US4975877A (en) * | 1988-10-20 | 1990-12-04 | Logic Devices Incorporated | Static semiconductor memory with improved write recovery and column address circuitry |
JP2582439B2 (ja) * | 1989-07-11 | 1997-02-19 | 富士通株式会社 | 書き込み可能な半導体記憶装置 |
-
1991
- 1991-02-07 US US07/651,817 patent/US5197029A/en not_active Expired - Lifetime
-
1992
- 1992-02-03 EP EP92101716A patent/EP0498336A1/en not_active Withdrawn
- 1992-02-06 KR KR1019920001713A patent/KR100242683B1/ko not_active Expired - Fee Related
- 1992-02-07 JP JP2280192A patent/JPH06181297A/ja active Pending
- 1992-05-22 TW TW081103995A patent/TW227073B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6781187B2 (en) | 2001-05-31 | 2004-08-24 | Seiko Epson Corporation | Nonvolatile semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
US5197029A (en) | 1993-03-23 |
EP0498336A1 (en) | 1992-08-12 |
TW227073B (en]) | 1994-07-21 |
KR100242683B1 (ko) | 2000-03-02 |
KR920017119A (ko) | 1992-09-26 |
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